SKM450GM12E4 ? by semikron rev. 0 C 23.04.2015 1 semitrans ? 3 gm igbt4 modules SKM450GM12E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 12khz ul recognized, file no. e63532 typical applications* matrix inverter bidirectional switch remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 175 c t c =25c 700 a t c =80c 538 a i cnom 450 a i crm i crm = 3xi cnom 1350 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 440 a t c =80c 329 a i fnom 400 a i frm i frm = 3xi fnom 1200 a i fsm t p = 10 ms, sin 180, t j =25c 1980 a t j -40 ... 175 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =450a v ge =15v chiplevel t j =25c 1.82 2.07 v t j =150c 2.23 2.44 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 2.27 2.61 m t j =150c 3.41 3.64 m v ge(th) v ge =v ce , i c = 16.4 ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 5m a t j =150c ma c ies v ce =25v v ge =0v f=1mhz 27.2 nf c oes f=1mhz 1.76 nf c res f=1mhz 1.50 nf q g v ge = - 8 v...+ 15 v 2500 nc r gint t j =25c 1.9 t d(on) v cc = 600 v i c =450a v ge = +15/-15 v r g on =1 r g off =1 di/dt on = 8100 a/s di/dt off =3400a/s t j =150c 246 ns t r t j =150c 59 ns e on t j =150c 32 mj t d(off) t j =150c 529 ns t f t j =150c 102 ns e off t j =150c 60 mj r th(j-c) per igbt 0.062 k/w
SKM450GM12E4 2 rev. 0 C 23.04.2015 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 450 a v ge =0v chiplevel t j =25c 2.31 2.65 v t j =150c 2.31 2.64 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 2.3 2.6 m t j =150c 3.1 3.4 m i rrm i f = 450 a di/dt off =8300a/s v ge =15v v cc = 600 v t j =150c 452 a q rr t j =150c 62 c e rr t j =150c 28 mj r th(j-c) per diode 0.14 k/w module l ce 15 nh r cc'+ee' terminal-chip t c =25c 0.55 m t c =125c 0.85 m r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g semitrans ? 3 gm igbt4 modules SKM450GM12E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 12khz ul recognized, file no. e63532 typical applications* matrix inverter bidirectional switch remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c
SKM450GM12E4 ? by semikron rev. 0 C 23.04.2015 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM450GM12E4 4 rev. 0 C 23.04.2015 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM450GM12E4 ? by semikron rev. 0 C 23.04.2015 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3 gm
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